Multilevel Programming Reliability in Si-doped GeSbTe for Storage Class Memory

التفاصيل البيبلوغرافية
العنوان: Multilevel Programming Reliability in Si-doped GeSbTe for Storage Class Memory
المؤلفون: Lama, G., Bernard, M., Bernier, N., Bourgeois, G., Nolot, E., Castellani, N., Garrione, J., Cyrille, M. C., Navarro, G., Nowak, E.
المصدر: 2021 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2021 IEEE International. :1-6 Mar, 2021
Relation: 2021 IEEE International Reliability Physics Symposium (IRPS)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781728168937
تدمد:19381891
DOI:10.1109/IRPS46558.2021.9405116