مؤتمر
Reliability of Wafer-Level Ultra-Thinning down to 3 µm using 20 nm-Node DRAMs
| العنوان: | Reliability of Wafer-Level Ultra-Thinning down to 3 µm using 20 nm-Node DRAMs |
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| المؤلفون: | Chen, Zhwen, Kim, Youngsuk, Fukuda, Tadashi, Sakui, Koji, Ohba, Takayuki, Kobayashi, Tatsuji, Obara, Takashi |
| المصدر: | 2021 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2021 IEEE International. :1-6 Mar, 2021 |
| Relation: | 2021 IEEE International Reliability Physics Symposium (IRPS) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781728168937 |
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| تدمد: | 19381891 |
| DOI: | 10.1109/IRPS46558.2021.9405125 |