التفاصيل البيبلوغرافية
| العنوان: |
A new test procedure to realistically estimate end-of-life electrical parameter stability of SiC MOSFETs in switching operation |
| المؤلفون: |
Salmen, P., Feil, M. W., Waschneck, K., Reisinger, H., Rescher, G., Aichinger, T. |
| المصدر: |
2021 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2021 IEEE International. :1-7 Mar, 2021 |
| Relation: |
2021 IEEE International Reliability Physics Symposium (IRPS) |
| قاعدة البيانات: |
IEEE Xplore Digital Library |
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