مؤتمر
Development of HSQ replacement gate process for silicon nanowire MOS devices
العنوان: | Development of HSQ replacement gate process for silicon nanowire MOS devices |
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المؤلفون: | Tu, Kun, Dong, Xiaoqiao, Zhang, Baotong, Huang, Ru, Li, Ming, Lu, Peimin |
المصدر: | 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Electron Devices Technology & Manufacturing Conference (EDTM), 2021 5th IEEE. :1-3 Apr, 2021 |
Relation: | 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) |
قاعدة البيانات: | IEEE Xplore Digital Library |
ردمك: | 9781728181769 |
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DOI: | 10.1109/EDTM50988.2021.9421017 |