Development of HSQ replacement gate process for silicon nanowire MOS devices

التفاصيل البيبلوغرافية
العنوان: Development of HSQ replacement gate process for silicon nanowire MOS devices
المؤلفون: Tu, Kun, Dong, Xiaoqiao, Zhang, Baotong, Huang, Ru, Li, Ming, Lu, Peimin
المصدر: 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Electron Devices Technology & Manufacturing Conference (EDTM), 2021 5th IEEE. :1-3 Apr, 2021
Relation: 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781728181769
DOI:10.1109/EDTM50988.2021.9421017