التفاصيل البيبلوغرافية
| العنوان: |
Comprehensive Comparison of Fabricated 1.6-kV Punch-Through Design Ni/n-SiC Schottky Barrier Diode with Ar+ Implant Edge Termination and Heterojunction p-NiO/n-SiC Diode |
| المؤلفون: |
Shimbori, Atsushi, Wong, Hiu Yung, Huang, Alex Q. |
| المصدر: |
2021 IEEE Latin America Electron Devices Conference (LAEDC) Electron Devices Conference (LAEDC), 2021 IEEE Latin America. :1-4 Apr, 2021 |
| Relation: |
2021 IEEE Latin America Electron Devices Conference (LAEDC) |
| قاعدة البيانات: |
IEEE Xplore Digital Library |
