16kbit 1T1R OxRAM arrays embedded in 28nm FDSOI technology demonstrating low BER, high endurance, and compatibility with core logic transistors

التفاصيل البيبلوغرافية
العنوان:	16kbit 1T1R OxRAM arrays embedded in 28nm FDSOI technology demonstrating low BER, high endurance, and compatibility with core logic transistors
المؤلفون:	Grenouillet, L., Castellani, N., Persico, A., Meli, V., Martin, S., Billoint, O., Segaud, R., Bernasconi, S., Pellissier, C., Jahan, C., Charpin-Nicolle, C., Dezest, P., Carabasse, C., Besombes, P., Ricavy, S., Tran, N.-P., Magalhaes-Lucas, A., Roman, A., Boixaderas, C., Magis, T., Bedjaoui, M., Tessaire, M., Seignard, A., Mazen, F., Landis, S., Vianello, E., Molas, G., Gaillard, F., Arcamone, J., Nowak, E.
المصدر:	2021 IEEE International Memory Workshop (IMW) Memory Workshop (IMW), 2021 IEEE International. :1-4 May, 2021
Relation:	2021 IEEE International Memory Workshop (IMW)
قاعدة البيانات:	IEEE Xplore Digital Library