التفاصيل البيبلوغرافية
| العنوان: |
Rugged Dynamic Behaviour of 3.3kV SiC Power MOSFETs with High–k Gate Dielectric |
| المؤلفون: |
Romano, G., Wirths, S., Mihaila, A., Arango, Y., Ruiz, A., Knoll, L. |
| المصدر: |
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2021 33rd International Symposium on. :263-266 May, 2021 |
| Relation: |
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) |
| قاعدة البيانات: |
IEEE Xplore Digital Library |
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