التفاصيل البيبلوغرافية
| العنوان: |
Impact Ionization Induced Breakdown and Related HTRB Behaviors in 100-V p-GaN Gate HEMTs |
| المؤلفون: |
Cheng, Yan, Wang, Yuru, Feng, Sirui, Zheng, Zheyang, Chen, Tao, Lyu, Gang, Ng, Yat Hon, Chen, Kevin J. |
| المصدر: |
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2021 33rd International Symposium on. :1-4 May, 2021 |
| Relation: |
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) |
| قاعدة البيانات: |
IEEE Xplore Digital Library |
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