التفاصيل البيبلوغرافية
| العنوان: |
In depth TCAD analysis of threshold voltage on GaN-on-Si MOS-channel fully recessed gate HEMTs |
| المؤلفون: |
Jaud, M. -A., Vandendaele, W., Rrustemi, B., Viey, A. G., Martin, S., Le Royer, C., Vauche, L., Martinie, S., Morvan, E., Gwoziecki, R., Modica, R., Iucolano, F., Plissonnier, M., Poiroux, T. |
| المصدر: |
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2021 33rd International Symposium on. :319-322 May, 2021 |
| Relation: |
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) |
| قاعدة البيانات: |
IEEE Xplore Digital Library |
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