High current gain GaN bipolar junction transistors with regrown emitters

التفاصيل البيبلوغرافية
العنوان: High current gain GaN bipolar junction transistors with regrown emitters
المؤلفون: Xing, H., McCarthy, L., Keller, S., DenBaars, S.P., Mishra, U.K.
المصدر: 2000 IEEE International Symposium on Compound Semiconductors. Proceedings of the IEEE Twenty-Seventh International Symposium on Compound Semiconductors (Cat. No.00TH8498) Compound semiconductors Compound Semiconductors, 2000 IEEE International Symposium on. :365-369 2000
Relation: 2000 IEEE International Symposium on Compound Semiconductors Proceedings of the IEEE Twenty-Seventh International Symposium on Compound Semiconductors
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780362586
9780780362581
DOI:10.1109/ISCS.2000.947183