Effect of RF Sputtering Power Density and Post Thermal Annealing Temperature on the Performance of Aluminium-Doped Zinc Oxide Thin-Film Transistor

التفاصيل البيبلوغرافية
العنوان:	Effect of RF Sputtering Power Density and Post Thermal Annealing Temperature on the Performance of Aluminium-Doped Zinc Oxide Thin-Film Transistor
المؤلفون:	Huang, Jinyang, Zhang, Meng, Yang, Yuyang, Zhang, Xincheng, Zeng, Yuhuang, Chen, Zhiying, Yan, Yan, Liou, Juin Jei
المصدر:	2021 9th International Symposium on Next Generation Electronics (ISNE) Next Generation Electronics (ISNE), 2021 9th International Symposium on. :1-4 Jul, 2021
Relation:	2021 9th International Symposium on Next Generation Electronics (ISNE)
قاعدة البيانات:	IEEE Xplore Digital Library