التفاصيل البيبلوغرافية
العنوان: |
Effect of RF Sputtering Power Density and Post Thermal Annealing Temperature on the Performance of Aluminium-Doped Zinc Oxide Thin-Film Transistor |
المؤلفون: |
Huang, Jinyang, Zhang, Meng, Yang, Yuyang, Zhang, Xincheng, Zeng, Yuhuang, Chen, Zhiying, Yan, Yan, Liou, Juin Jei |
المصدر: |
2021 9th International Symposium on Next Generation Electronics (ISNE) Next Generation Electronics (ISNE), 2021 9th International Symposium on. :1-4 Jul, 2021 |
Relation: |
2021 9th International Symposium on Next Generation Electronics (ISNE) |
قاعدة البيانات: |
IEEE Xplore Digital Library |