مؤتمر
New Read Schemes to Reduce Read Disturbance Due to HCI in Full Boosting Channel 3-D NAND Flash Memories
| العنوان: | New Read Schemes to Reduce Read Disturbance Due to HCI in Full Boosting Channel 3-D NAND Flash Memories |
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| المؤلفون: | Jo, Hyungjun, Shin, Hyungcheol |
| المصدر: | 2021 Silicon Nanoelectronics Workshop (SNW) Silicon Nanoelectronics Workshop (SNW), 2021. :1-2 Jun, 2021 |
| Relation: | 2021 Silicon Nanoelectronics Workshop (SNW) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9784863487819 |
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| تدمد: | 21614644 |