التفاصيل البيبلوغرافية
| العنوان: |
First Demonstration of Ruthenium and Molybdenum Word lines Integrated into 40nm Pitch 3D-NAND Memory Devices |
| المؤلفون: |
Ajaykumar, A., Breuil, L., Katcko, K., Schleicher, F., Sebaai, F., Oniki, Y., Ramesh, S., Arreghini, A., Nyns, L., Soulie, J. -P., Stiers, J., den Bosch, G. Van, Rosmeulen, M. |
| المصدر: |
2021 Symposium on VLSI Technology VLSI Technology, 2021 Symposium on. :1-2 Jun, 2021 |
| Relation: |
2021 Symposium on VLSI Technology |
| قاعدة البيانات: |
IEEE Xplore Digital Library |
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