Failure mechanisms of GaN HEMTs for microwave and millimeter-wave applications: from interdiffusion effects to hot-electrons degradation

التفاصيل البيبلوغرافية
العنوان: Failure mechanisms of GaN HEMTs for microwave and millimeter-wave applications: from interdiffusion effects to hot-electrons degradation
المؤلفون: Meneghesso, G., Meneghini, M., De Santi, C., Buffolo, M., Rampazzo, F., Chiocchetta, F., Zhan, G., Sharma, C., Zanoni, E.
المصدر: 2021 43rd Annual EOS/ESD Symposium (EOS/ESD) EOS/ESD Symposium (EOS/ESD), 2021 43rd Annual. 43:1-8 Sep, 2021
Relation: 2021 43rd Annual EOS/ESD Symposium (EOS/ESD)
قاعدة البيانات: IEEE Xplore Digital Library