Nanosheet Width Investigation for Gate-All-Around Devices Targeting SRAM Application

التفاصيل البيبلوغرافية
العنوان:	Nanosheet Width Investigation for Gate-All-Around Devices Targeting SRAM Application
المؤلفون:	Pal, Ashish, Bazizi, El Mehdi, Colombeau, Benjamin, Alexander, Blessy, Ayyagari-Sangamalli, Buvna
المصدر:	2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Simulation of Semiconductor Processes and Devices (SISPAD), 2021 International Conference on. :19-22 Sep, 2021
Relation:	2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
قاعدة البيانات:	IEEE Xplore Digital Library