التفاصيل البيبلوغرافية
العنوان: |
Nanosheet Width Investigation for Gate-All-Around Devices Targeting SRAM Application |
المؤلفون: |
Pal, Ashish, Bazizi, El Mehdi, Colombeau, Benjamin, Alexander, Blessy, Ayyagari-Sangamalli, Buvna |
المصدر: |
2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Simulation of Semiconductor Processes and Devices (SISPAD), 2021 International Conference on. :19-22 Sep, 2021 |
Relation: |
2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) |
قاعدة البيانات: |
IEEE Xplore Digital Library |