MBE-Grown Ge0.92Sn0.08 Diode on RPCVD-Grown Partially Relaxed Virtual Ge0.92Sn0.08 Substrate

التفاصيل البيبلوغرافية
العنوان: MBE-Grown Ge0.92Sn0.08 Diode on RPCVD-Grown Partially Relaxed Virtual Ge0.92Sn0.08 Substrate
المؤلفون: Schwarz, D., Schafer, S. C., Seidel, L., Funk, H. S., Weisshaupt, D., Oehme, M., Schlykow, V., Kiyek, V., Buca, D., Schulze, J.
المصدر: 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO) Information, Communication and Electronic Technology (MIPRO), 2021 44th International Convention on. :50-54 Sep, 2021
Relation: 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9789532331011
تدمد:26238764
DOI:10.23919/MIPRO52101.2021.9596634