Modeling and Simulation Study of Electrical Properties of Ge-on-Si Diodes with Nanometer-thin PureGaB Layer

التفاصيل البيبلوغرافية
العنوان: Modeling and Simulation Study of Electrical Properties of Ge-on-Si Diodes with Nanometer-thin PureGaB Layer
المؤلفون: Markovic, L., Knezevic, T., Nanver, L.K., Suligoj, T.
المصدر: 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO) Information, Communication and Electronic Technology (MIPRO), 2021 44th International Convention on. :64-69 Sep, 2021
Relation: 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9789532331011
تدمد:26238764
DOI:10.23919/MIPRO52101.2021.9597002