GaN-HEMTs on Diamond Prepared by Room-Temperature Bonding Technology

التفاصيل البيبلوغرافية
العنوان: GaN-HEMTs on Diamond Prepared by Room-Temperature Bonding Technology
المؤلفون: Hiza, S., Shirayanagi, Y., Takiguchi, Y., Nishimura, K., Matsumae, T., Kurashima, Y., Higurashi, E., Takagi, H., Chayahara, A., Mokuno, Y., Yamada, H., Kasamura, K., Toyoda, H., Kubota, A., Yamamuka, M.
المصدر: 2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Low Temperature Bonding for 3D Integration (LTB-3D), 2021 7th International Workshop on. :16-16 Oct, 2021
Relation: 2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781665405676
DOI:10.1109/LTB-3D53950.2021.9598420