4-Terminal Ferroelectric Schottky Barrier Field Effect Transistors as Artificial Synapses

التفاصيل البيبلوغرافية
العنوان: 4-Terminal Ferroelectric Schottky Barrier Field Effect Transistors as Artificial Synapses
المؤلفون: Xi, Fengben, Han, Yi, Tiedemann, Andreas, Grutzmacher, Detlev, Zhao, Qing-Tai
المصدر: ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC) Solid-State Device Research Conference (ESSDERC), ESSDERC 2021 - IEEE 51st European. :291-294 Sep, 2021
Relation: ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781665437486
DOI:10.1109/ESSDERC53440.2021.9631818