التفاصيل البيبلوغرافية
| العنوان: |
Fabrication and Characterization of ZrO2/AlGaN/GaN MIS-HEMTs with regrown AlGaN Layer |
| المؤلفون: |
Maeda, S., Nagase, I., Baratov, A., Urano, S., Asubar, J. T., Yamamoto, A., Kuzuhara, M. |
| المصدر: |
2021 IEEE International Meeting for Future Electron Devices, Kansai (IMFEDK) Future of Electron Devices, Kansai (IMFEDK), 2021 IEEE International Meeting for. :1-2 Nov, 2021 |
| Relation: |
2021 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) |
| قاعدة البيانات: |
IEEE Xplore Digital Library |
