A Static, Switching, Short-circuit Characteristics of 1.2 kV 4H-SiC MOSFETs: Comparison between Linear and (Bridged) Hexagonal Topology

التفاصيل البيبلوغرافية
العنوان: A Static, Switching, Short-circuit Characteristics of 1.2 kV 4H-SiC MOSFETs: Comparison between Linear and (Bridged) Hexagonal Topology
المؤلفون: Kim, Dongyoung, Yun, Nick, deBoer, Skylar, Morgan, Adam J, Jang, Seung Yup, Sung, Woongje, Fan, Junchong, Yu, Susanna, Kang, Minseok, Agarwal, Anant K.
المصدر: 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Wide Bandgap Power Devices and Applications (WiPDA), 2021 IEEE 8th Workshop on. :9-13 Nov, 2021
Relation: 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781665401821
DOI:10.1109/WiPDA49284.2021.9645098