مؤتمر
High Breakdown Voltage AlGaN/GaN HEMT with Graded Fluorine Ion Implantation Terminal in Thick Passivation Layer
| العنوان: | High Breakdown Voltage AlGaN/GaN HEMT with Graded Fluorine Ion Implantation Terminal in Thick Passivation Layer |
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| المؤلفون: | Deng, Siyu, Luo, Xiaorong, Wei, Jie, Jia, Yanjiang, Sun, Tao, Xi, Lufan, Jiang, Zhuolin, Yang, Kemeng, Jiang, Qingfeng, Zhang, Bo |
| المصدر: | 2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), 2021 IEEE Workshop on. :403-406 Aug, 2021 |
| Relation: | 2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
| ردمك: | 9781665418515 9781665418508 |
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| DOI: | 10.1109/WiPDAAsia51810.2021.9656064 |