دورية أكاديمية
TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs
العنوان: | TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs |
---|---|
المؤلفون: | Tallarico, A.N., Millesimo, M., Bakeroot, B., Borga, M., Posthuma, N., Decoutere, S., Sangiorgi, E., Fiegna, C. |
المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 69(2):507-513 Feb, 2022 |
قاعدة البيانات: | IEEE Xplore Digital Library |
تدمد: | 00189383 15579646 |
---|---|
DOI: | 10.1109/TED.2021.3134928 |