مؤتمر
Physical characterisation of high-k gate stacks deposited on HF-last surfaces
العنوان: | Physical characterisation of high-k gate stacks deposited on HF-last surfaces |
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المؤلفون: | Bender, H., Conard, T., Nohira, H., Petry, J., Richard, O., Zhao, C., Brijs, B., Besling, W., Detavernier, C., Vandervorst, W., Caymax, M., De Gendt, S., Chen, J., Kluth, J., Tsai, W., Maes, J.W. |
المصدر: | Extended Abstracts of International Workshop on Gate Insulator. IWGI 2001 (IEEE Cat. No.01EX537) Gate insulator Gate Insulator, 2001. IWGI 2001. Extended Abstracts of International Workshop on. :86-92 2001 |
Relation: | Extended Abstracts of International Workshop on Gate Insulator. IWGI 2001 |
قاعدة البيانات: | IEEE Xplore Digital Library |
ردمك: | 4891140216 9784891140212 |
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DOI: | 10.1109/IWGI.2001.967553 |