Physical characterisation of high-k gate stacks deposited on HF-last surfaces

التفاصيل البيبلوغرافية
العنوان: Physical characterisation of high-k gate stacks deposited on HF-last surfaces
المؤلفون: Bender, H., Conard, T., Nohira, H., Petry, J., Richard, O., Zhao, C., Brijs, B., Besling, W., Detavernier, C., Vandervorst, W., Caymax, M., De Gendt, S., Chen, J., Kluth, J., Tsai, W., Maes, J.W.
المصدر: Extended Abstracts of International Workshop on Gate Insulator. IWGI 2001 (IEEE Cat. No.01EX537) Gate insulator Gate Insulator, 2001. IWGI 2001. Extended Abstracts of International Workshop on. :86-92 2001
Relation: Extended Abstracts of International Workshop on Gate Insulator. IWGI 2001
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:4891140216
9784891140212
DOI:10.1109/IWGI.2001.967553