Infrared interface analysis of high-k dielectrics deposited by atomic layer chemical vapour deposition

التفاصيل البيبلوغرافية
العنوان: Infrared interface analysis of high-k dielectrics deposited by atomic layer chemical vapour deposition
المؤلفون: Cosnier, V., Bender, H., Caymax, A., Chen, J., Conard, T., Nohira, H., Richard, O., Tsai, W., Vandervorst, W., Young, E., Zhao, C., De Gendt, S., Heyns, A., Maes, J.W.H., Tuominen, M., Rochat, N., Olivier, M., Chabli, A.
المصدر: Extended Abstracts of International Workshop on Gate Insulator. IWGI 2001 (IEEE Cat. No.01EX537) Gate insulator Gate Insulator, 2001. IWGI 2001. Extended Abstracts of International Workshop on. :226-229 2001
Relation: Extended Abstracts of International Workshop on Gate Insulator. IWGI 2001
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:4891140216
9784891140212
DOI:10.1109/IWGI.2001.967590