دورية أكاديمية
Online Gate-Oxide Degradation Monitoring of Planar SiC MOSFETs Based on Gate Charge Time
العنوان: | Online Gate-Oxide Degradation Monitoring of Planar SiC MOSFETs Based on Gate Charge Time |
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المؤلفون: | Xie, M., Sun, P., Wang, K., Luo, Q., Du, X. |
المصدر: | IEEE Transactions on Power Electronics IEEE Trans. Power Electron. Power Electronics, IEEE Transactions on. 37(6):7333-7343 Jun, 2022 |
قاعدة البيانات: | IEEE Xplore Digital Library |
تدمد: | 08858993 19410107 |
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DOI: | 10.1109/TPEL.2022.3142139 |