دورية أكاديمية
Negative-Bias-Stress and Total-Ionizing-Dose Effects in Deeply Scaled Ge-GAA Nanowire pFETs
| العنوان: | Negative-Bias-Stress and Total-Ionizing-Dose Effects in Deeply Scaled Ge-GAA Nanowire pFETs |
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| المؤلفون: | Rony, M.W., Zhang, E.X., Toguchi, S., Luo, X., Reaz, M., Li, K., Linten, D., Mitard, J., Reed, R.A., Fleetwood, D.M., Schrimpf, R.D. |
| المصدر: | IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 69(3):299-306 Mar, 2022 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 00189499 15581578 |
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| DOI: | 10.1109/TNS.2022.3144204 |