دورية أكاديمية
LaSiOx- and Al2O3-Inserted Low-Temperature Gate-Stacks for Improved BTI Reliability in 3-D Sequential Integration
| العنوان: | LaSiOx- and Al2O3-Inserted Low-Temperature Gate-Stacks for Improved BTI Reliability in 3-D Sequential Integration |
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| المؤلفون: | Wu, Z., Franco, J., Vandooren, A., Arimura, H., Ragnarsson, L., Roussel, P., Kaczer, B., Linten, D., Collaert, N., Groeseneken, G. |
| المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 69(3):915-921 Mar, 2022 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 00189383 15579646 |
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| DOI: | 10.1109/TED.2022.3141983 |