دورية أكاديمية
Hysteresis-Free Gate-All-Around Stacked Poly-Si Nanosheet Channel Ferroelectric HfxZr1-xO2 Negative Capacitance FETs With Internal Metal Gate and NH3 Plasma Nitridation
| العنوان: | Hysteresis-Free Gate-All-Around Stacked Poly-Si Nanosheet Channel Ferroelectric HfxZr1-xO2 Negative Capacitance FETs With Internal Metal Gate and NH3 Plasma Nitridation |
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| المؤلفون: | Lee, C., Hsieh, D., Li, S., Kuo, Y., Chao, T. |
| المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 69(3):1512-1518 Mar, 2022 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 00189383 15579646 |
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| DOI: | 10.1109/TED.2022.3147445 |