التفاصيل البيبلوغرافية
| العنوان: |
A GaN Power Integration Platform Based on Engineered Bulk Si Substrate with Eliminated Crosstalk between High-Side and Low-Side HEMTs |
| المؤلفون: |
Lyu, Gang, Wei, Jin, Song, Wenjie, Zheng, Zheyang, Zhang, Li, Zhang, Jie, Cheng, Yan, Feng, Sirui, Ng, Yat Hon, Chen, Tao, Zhong, Kailun, Liu, Jiapeng, Zeng, Rong, Chen, Kevin J. |
| المصدر: |
2021 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2021 IEEE International. :5.2.1-5.2.4 Dec, 2021 |
| Relation: |
2021 IEEE International Electron Devices Meeting (IEDM) |
| قاعدة البيانات: |
IEEE Xplore Digital Library |
Full Text Finder