التفاصيل البيبلوغرافية
| العنوان: |
Gate-Last I/O Transistors based on Stacked Gate-All-Around Nanosheet Architecture for Advanced Logic Technologies |
| المؤلفون: |
Bhuiyan, M., Kim, M., Zhou, H., Lo, H., Siddiqui, S., Stolfi, M., Guarini, T., Pujari, R., Davey, E., Stuckert, E., Li, J., Chou, A., Zhao, K., Wang, M., Guo, D., Colombeau, B., Loubet, N., Haran, B., Bu, H. |
| المصدر: |
2021 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2021 IEEE International. :1-4 Dec, 2021 |
| Relation: |
2021 IEEE International Electron Devices Meeting (IEDM) |
| قاعدة البيانات: |
IEEE Xplore Digital Library |
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