InGaAs/InP SPAD detecting single photons at 1550 nm with up to 50% efficiency and low noise

التفاصيل البيبلوغرافية
العنوان: InGaAs/InP SPAD detecting single photons at 1550 nm with up to 50% efficiency and low noise
المؤلفون: Signorelli, F., Telesca, F., Conca, E., Frera, A. Della, Ruggeri, A., Giudice, A., Tosi, A.
المصدر: 2021 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2021 IEEE International. :20.3.1-20.3.4 Dec, 2021
Relation: 2021 IEEE International Electron Devices Meeting (IEDM)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781665425728
تدمد:2156017X
DOI:10.1109/IEDM19574.2021.9720559