Understanding and modelling the PBTI reliability of thin-film IGZO transistors

التفاصيل البيبلوغرافية
العنوان: Understanding and modelling the PBTI reliability of thin-film IGZO transistors
المؤلفون: Chasin, A., Franco, J., Triantopoulos, K., Dekkers, H., Rassoul, N., Belmonte, A., Smets, Q., Subhechha, S., Claes, D., van Setten, M. J., Mitard, J., Delhougne, R., Afanas'ev, V., Kaczer, B., Kar, G. S.
المصدر: 2021 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2021 IEEE International. :31.1.1-31.1.4 Dec, 2021
Relation: 2021 IEEE International Electron Devices Meeting (IEDM)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781665425728
تدمد:2156017X
DOI:10.1109/IEDM19574.2021.9720666