A 110-to-130GHz SiGe BiCMOS Doherty Power Amplifier With Slotline-Based Power-Combining Technique Achieving >22dBm Saturated Output Power and >10% Power Back-off Efficiency

التفاصيل البيبلوغرافية
العنوان: A 110-to-130GHz SiGe BiCMOS Doherty Power Amplifier With Slotline-Based Power-Combining Technique Achieving >22dBm Saturated Output Power and >10% Power Back-off Efficiency
المؤلفون: Li, Xingcun, Chen, Wenhua, Li, Shuyang, Wu, Huibo, Yi, Xiang, Han, Ruonan, Feng, Zhenghe
المصدر: 2022 IEEE International Solid-State Circuits Conference (ISSCC) Solid-State Circuits Conference (ISSCC), 2022 IEEE International. 65:316-318 Feb, 2022
Relation: 2022 IEEE International Solid-State Circuits Conference (ISSCC)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781665428002
تدمد:23768606
DOI:10.1109/ISSCC42614.2022.9731552