Single-Mode CMOS 6T-SRAM Macros With Keeper-Loading-Free Peripherals and Row-Separate Dynamic Body Bias Achieving 2.53fW/bit Leakage for AIoT Sensing Platforms

التفاصيل البيبلوغرافية
العنوان:	Single-Mode CMOS 6T-SRAM Macros With Keeper-Loading-Free Peripherals and Row-Separate Dynamic Body Bias Achieving 2.53fW/bit Leakage for AIoT Sensing Platforms
المؤلفون:	Zhang, Yihan, Xue, Chang, Wang, Xiao, Liu, Tianyi, Gao, Jihang, Chen, Peiyu, Liu, Jinguang, Sun, Linan, Shen, Linxiao, Ru, Jiayoon, Ye, Le, Huang, Ru
المصدر:	2022 IEEE International Solid-State Circuits Conference (ISSCC) Solid-State Circuits Conference (ISSCC), 2022 IEEE International. 65:184-186 Feb, 2022
Relation:	2022 IEEE International Solid-State Circuits Conference (ISSCC)
قاعدة البيانات:	IEEE Xplore Digital Library