دورية أكاديمية
High-Performance Self-Aligned Top-Gate Amorphous InGaZnO TFTs With 4 nm-Thick Atomic-Layer-Deposited AlOx Insulator
| العنوان: | High-Performance Self-Aligned Top-Gate Amorphous InGaZnO TFTs With 4 nm-Thick Atomic-Layer-Deposited AlOx Insulator |
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| المؤلفون: | Li, J., Zhang, Y., Wang, J., Yang, H., Zhou, X., Chan, M., Wang, X., Lu, L., Zhang, S. |
| المصدر: | IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 43(5):729-732 May, 2022 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 07413106 15580563 |
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| DOI: | 10.1109/LED.2022.3160514 |