التفاصيل البيبلوغرافية
| العنوان: |
Behavior of Damaged Sites Introduced by SEGR in Silicon Carbide Power MOSFETs |
| المؤلفون: |
Nakada, Y., Kuboyama, S., Mizuta, E., Takeyama, A., Ohshima, T., Shindou, H. |
| المصدر: |
2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Radiation and Its Effects on Components and Systems (RADECS), 2019 19th European Conference on. :1-4 Sep, 2019 |
| Relation: |
2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) |
| قاعدة البيانات: |
IEEE Xplore Digital Library |
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