التفاصيل البيبلوغرافية
العنوان: |
Behavior of Damaged Sites Introduced by SEGR in Silicon Carbide Power MOSFETs |
المؤلفون: |
Nakada, Y., Kuboyama, S., Mizuta, E., Takeyama, A., Ohshima, T., Shindou, H. |
المصدر: |
2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Radiation and Its Effects on Components and Systems (RADECS), 2019 19th European Conference on. :1-4 Sep, 2019 |
Relation: |
2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) |
قاعدة البيانات: |
IEEE Xplore Digital Library |