Failure analysis addressing method of optically undetected defectivity on 4H-SiC PowerMOSFET epitaxial layer

التفاصيل البيبلوغرافية
العنوان: Failure analysis addressing method of optically undetected defectivity on 4H-SiC PowerMOSFET epitaxial layer
المؤلفون: Alessandrino, S., Carbone, B., Cordiano, F., Mazza, B., Russo, A., Coco, W., Boscaglia, M., Salvo, A. Di, Lombardo, A., Scarcella, D., Vitanza, E., Fiorenza, P.
المصدر: 2022 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2022 IEEE International. :P61-1-P61-4 Mar, 2022
Relation: 2022 IEEE International Reliability Physics Symposium (IRPS)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781665479509
تدمد:19381891
DOI:10.1109/IRPS48227.2022.9764423