التفاصيل البيبلوغرافية
العنوان: |
Failure analysis addressing method of optically undetected defectivity on 4H-SiC PowerMOSFET epitaxial layer |
المؤلفون: |
Alessandrino, S., Carbone, B., Cordiano, F., Mazza, B., Russo, A., Coco, W., Boscaglia, M., Salvo, A. Di, Lombardo, A., Scarcella, D., Vitanza, E., Fiorenza, P. |
المصدر: |
2022 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2022 IEEE International. :P61-1-P61-4 Mar, 2022 |
Relation: |
2022 IEEE International Reliability Physics Symposium (IRPS) |
قاعدة البيانات: |
IEEE Xplore Digital Library |