Transistor Reliability Characterization for Advanced DRAM with HK+MG & EUV process technology

التفاصيل البيبلوغرافية
العنوان: Transistor Reliability Characterization for Advanced DRAM with HK+MG & EUV process technology
المؤلفون: Lee, N-H, Lee, S., Kim, S-H, Kim, G-J, Lee, KW., Lee, YS., Hwang, YC., Kim, HS., Pae, S.
المصدر: 2022 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2022 IEEE International. :6A.1-1-6A.1-6 Mar, 2022
Relation: 2022 IEEE International Reliability Physics Symposium (IRPS)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781665479509
تدمد:19381891
DOI:10.1109/IRPS48227.2022.9764439