Reliability of Ferroelectric and Antiferroelectric Si:HfO2 materials in 3D capacitors by TDDB studies

التفاصيل البيبلوغرافية
العنوان: Reliability of Ferroelectric and Antiferroelectric Si:HfO2 materials in 3D capacitors by TDDB studies
المؤلفون: Viegas, A., Falidas, K., Ali, T., Kuhnel, K., Hoffmann, R., Mart, C., Czernohorsky, M., Heitmann, J.
المصدر: 2022 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2022 IEEE International. :P47-1-P47-5 Mar, 2022
Relation: 2022 IEEE International Reliability Physics Symposium (IRPS)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781665479509
تدمد:19381891
DOI:10.1109/IRPS48227.2022.9764517