Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery

التفاصيل البيبلوغرافية
العنوان: Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery
المؤلفون: Bastos, J. P., O'Sullivan, B. J., Franco, J., Tyaginov, S., Truijen, B., Chasin, A., Degraeve, R., Kaczer, B., Ritzenthaler, R., Capogreco, E., Litta, E. D., Spessot, A., Higashi, Y., Yoon, Y., Machkaoutsan, V., Fazan, P., Horiguchi, N.
المصدر: 2022 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2022 IEEE International. :1-6 Mar, 2022
Relation: 2022 IEEE International Reliability Physics Symposium (IRPS)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781665479509
تدمد:19381891
DOI:10.1109/IRPS48227.2022.9764547