Towards the Characterization of Full ID-VG Degradation in Transistors for Future Analog Applications

التفاصيل البيبلوغرافية
العنوان: Towards the Characterization of Full ID-VG Degradation in Transistors for Future Analog Applications
المؤلفون: Ren, Pengpeng, Zhang, Xinfa, Liu, Junhua, Wang, Runsheng, Ji, Zhigang, Huang, Ru
المصدر: 2022 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2022 IEEE International. :3A.4-1-3A.4-5 Mar, 2022
Relation: 2022 IEEE International Reliability Physics Symposium (IRPS)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781665479509
تدمد:19381891
DOI:10.1109/IRPS48227.2022.9764579