Negative Gate Bias TDDB evaluation of n-Channel SiC Vertical Power MOSFETs

التفاصيل البيبلوغرافية
العنوان:	Negative Gate Bias TDDB evaluation of n-Channel SiC Vertical Power MOSFETs
المؤلفون:	Ganguly, Satyaki, Lichtenwalner, Daniel J., Isaacson, Caleb, Gajewski, Donald A., Steinmann, Philipp, Foarde, Ryan, Hull, Brett, Ryu, Sei-Hyung, Allen, Scott, Palmour, John W.
المصدر:	2022 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2022 IEEE International. :8B.1-1-8B.1-6 Mar, 2022
Relation:	2022 IEEE International Reliability Physics Symposium (IRPS)
قاعدة البيانات:	IEEE Xplore Digital Library