التفاصيل البيبلوغرافية
العنوان: |
Negative Gate Bias TDDB evaluation of n-Channel SiC Vertical Power MOSFETs |
المؤلفون: |
Ganguly, Satyaki, Lichtenwalner, Daniel J., Isaacson, Caleb, Gajewski, Donald A., Steinmann, Philipp, Foarde, Ryan, Hull, Brett, Ryu, Sei-Hyung, Allen, Scott, Palmour, John W. |
المصدر: |
2022 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2022 IEEE International. :8B.1-1-8B.1-6 Mar, 2022 |
Relation: |
2022 IEEE International Reliability Physics Symposium (IRPS) |
قاعدة البيانات: |
IEEE Xplore Digital Library |