مؤتمر
High-K incorporated in a SiON tunnel layer for 3D NAND programming voltage reduction
| العنوان: | High-K incorporated in a SiON tunnel layer for 3D NAND programming voltage reduction |
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| المؤلفون: | Breuil, L., Nyns, L., Rachidi, S., Banerjee, K., Arreghini, A., Bastos, J., Ramesh, S., Van den bosch, G., Rosmeulen, M. |
| المصدر: | 2022 IEEE International Memory Workshop (IMW) Memory Workshop (IMW), 2022 IEEE International. :1-4 May, 2022 |
| Relation: | 2022 IEEE International Memory Workshop (IMW) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781665499477 |
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| تدمد: | 25737503 |
| DOI: | 10.1109/IMW52921.2022.9779307 |