دورية أكاديمية
Cryogenic Quasi-Ballistic Transport Enhanced by Strained Silicon Technologies in 14-nm Complementary Fin Field Effect Transistors Through Virtual Source Model
| العنوان: | Cryogenic Quasi-Ballistic Transport Enhanced by Strained Silicon Technologies in 14-nm Complementary Fin Field Effect Transistors Through Virtual Source Model |
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| المؤلفون: | Hsieh, E.R., Wang, Z.Y., Huang, Y.S., Hung, T.C., Lyu, R.Y., Lee, K.Y. |
| المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 69(7):3575-3580 Jul, 2022 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 00189383 15579646 |
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| DOI: | 10.1109/TED.2022.3175675 |