دورية أكاديمية
The DC Performance and RF Characteristics of GaN-Based HEMTs Improvement Using Graded AlGaN Back Barrier and Fe/C Co-Doped Buffer
| العنوان: | The DC Performance and RF Characteristics of GaN-Based HEMTs Improvement Using Graded AlGaN Back Barrier and Fe/C Co-Doped Buffer |
|---|---|
| المؤلفون: | Yang, L., Hou, B., Jia, F., Zhang, M., Wu, M., Niu, X., Lu, H., Shi, C., Mi, M., Zhu, Q., Lu, Y., Ma, X., Hao, Y. |
| المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 69(8):4170-4174 Aug, 2022 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 00189383 15579646 |
|---|---|
| DOI: | 10.1109/TED.2022.3179675 |