مؤتمر
A highly cost efficient 8F/sup 2/ DRAM cell with a double gate vertical transistor device for 100 nm and beyond
| العنوان: | A highly cost efficient 8F/sup 2/ DRAM cell with a double gate vertical transistor device for 100 nm and beyond |
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| المؤلفون: | Weis, R., Hummler, K., Akatsu, H., Kudelka, S., Dyer, T., Seitz, M., Scholz, A., Kim, B., Wise, M., Malik, R., Strane, J., Goebel, Th., McStay, K., Beintner, J., Arnold, N., Gerber, R., Liegl, B., Knorr, A., Economikos, L., Simpson, A., Yan, W., Dobuzinsky, D., Mandelman, J., Nesbit, L., Radens, C.J., Divakaruni, R., Bergner, W., Bronner, G., Mueller, W. |
| المصدر: | International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) Electron devices meeting 2001 Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International. :18.7.1-18.7.4 2001 |
| Relation: | International Electron Devices Meeting. Technical Digest |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 0780370503 9780780370500 |
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| DOI: | 10.1109/IEDM.2001.979525 |