دورية أكاديمية
Steep Switching Si Nanowire p-FETs With Dopant Segregated Silicide Source/Drain at Cryogenic Temperature
| العنوان: | Steep Switching Si Nanowire p-FETs With Dopant Segregated Silicide Source/Drain at Cryogenic Temperature |
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| المؤلفون: | Han, Y., Sun, J., Richstein, B., Allibert, F., Radu, I., Bae, J., Grutzmacher, D., Knoch, J., Zhao, Q. |
| المصدر: | IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 43(8):1187-1190 Aug, 2022 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 07413106 15580563 |
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| DOI: | 10.1109/LED.2022.3185781 |