دورية أكاديمية
Vertical C-Shaped-Channel Nanosheet FETs Featured With Precise Control of Both Channel-Thickness and Gate-Length
| العنوان: | Vertical C-Shaped-Channel Nanosheet FETs Featured With Precise Control of Both Channel-Thickness and Gate-Length |
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| المؤلفون: | Xiao, Z.R., Wang, Q., Zhu, H.L., Chen, Z., Zhang, Y.K., Li, J.J., Zhou, N., Gao, J.F., Ai, X.Z., Lu, S.S., Huang, W.X., Xiong, W.J., Kong, Z.Z., Xiang, J.J., Zhang, Y., Zhao, J., Liu, J.B., Lu, Y.H., Bai, G.B., He, X.B., Du, A.Y., Wu, Z.H., Yang, T., Li, J.F., Luo, J., Wang, W.W., Ye, T.C. |
| المصدر: | IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 43(8):1183-1186 Aug, 2022 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 07413106 15580563 |
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| DOI: | 10.1109/LED.2022.3187006 |