Electrical Noise Analysis of L-Shaped Gate Tunnel Field Effect Transistor

التفاصيل البيبلوغرافية
العنوان: Electrical Noise Analysis of L-Shaped Gate Tunnel Field Effect Transistor
المؤلفون: Chander, Sweta, Chaudhary, Rekha, Sinha, Sanjeet Kumar
المصدر: 2022 IEEE VLSI Device Circuit and System (VLSI DCS) VLSI Device Circuit and System (VLSI DCS), 2022 IEEE. :180-183 Feb, 2022
Relation: 2022 IEEE VLSI Device Circuit and System (VLSI DCS)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781665438018
DOI:10.1109/VLSIDCS53788.2022.9811457